The DX centre
T.N. Morgan
Semiconductor Science and Technology
A study of the annealed phases of Ge(111)/Ga for coverages above 0.05 ML is presented. The surfaces are investigated by low‐energy electron diffraction, scanning tunneling microscopy, and partly by photoemission and surface X‐ray diffraction using synchrotron radiation. For Ga coverages beyond 0.05 ML and up to about 2 ML and annealing temperatures higher than 500 °C four different phases appear. They all can be characterized as being discommensurate. Surprisingly, no commensurate superstructure appears on annealed Ge(111)/Ga. Copyright © 1995 WILEY‐VCH Verlag GmbH & Co. KGaA
T.N. Morgan
Semiconductor Science and Technology
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Robert W. Keyes
Physical Review B