Julien Autebert, Aditya Kashyap, et al.
Langmuir
A simple divacancy‐vacancy analysis has been applied to diffusion data in b.c.c. transition metals. Consideration of the divacancy contribution at high temperatures to diffusion coefficients determined with radioactive tracers is shown to be consistent with the nonlinear Arrhenius relationships for diffusion in V, Cr, β‐Ti and β‐Zr and with the corresponding linear relationships obtained for other b.c.c. metals. Copyright © 1967 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
Julien Autebert, Aditya Kashyap, et al.
Langmuir
T.N. Morgan
Semiconductor Science and Technology
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials