A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
A simple divacancy‐vacancy analysis has been applied to diffusion data in b.c.c. transition metals. Consideration of the divacancy contribution at high temperatures to diffusion coefficients determined with radioactive tracers is shown to be consistent with the nonlinear Arrhenius relationships for diffusion in V, Cr, β‐Ti and β‐Zr and with the corresponding linear relationships obtained for other b.c.c. metals. Copyright © 1967 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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Surface Review and Letters
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