Publication
Journal of Electronic Materials
Paper

The mechanical behavior of silicon during small-scale indentation

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Abstract

The mechanical behavior of crystalline silicon during small-scale indentation has been studied using a Nanoindenter. Tests were performed on both p-type and n-type materials in the (100), (110), and (111) orientations at peak loads ranging from 0.5 to 120 mN. The indentation load-displacement curves exhibit two features which appear to be unique to silicon. First, at large peak loads, a sharp discontinuity in displacement is observed as the indenter is unloaded. Second, at small peak loads, a large, non-degenerative hysteresis is exhibited. Possible mechanistic origins for the discontinuity and hysteresis are discussed. © 1990 AIME.

Date

01 Sep 1990

Publication

Journal of Electronic Materials

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