The interaction of CF₃ radicals and CF₃ radical precursors with SiO₂ surfaces

Abstract

The interaction between thermally grown SiO2 surfaces and hexafluoroazomethane was studied by means of soft X-ray photoemission. No interactions were observed for dark exposures, however, large exposures with simultaneous UV irradiation produced a surface layer consisting largely of trifluoromethyl radicals, the primary photolysis products of hexafluoroazomethane. The evolution of the surface as a function of annealing temperature is also discussed. © 1988.