Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
The crystalline perfection of Sn-doped GaAs crystals grown by the horizontal Bridgman technique was found to be dependent on the crystal growth direction. The highest perfection occurred for crystals grown near the <013> direction. Portions of both seeded and unseeded doped crystals grown in this direction were found to be dislocation-free. Also, undoped crystals seeded in the <013> direction were dislocation-free. © 1971, by The Electrochemical Society, Inc. All rights reserved.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
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