About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
JES
Paper
The Dependence of the Memory Effect in ZnS:Mn A-C Thin Film Electroluminescence on Mn Distribution
Abstract
It is known that the width of the memory loop of the brightness-voltage characteristic in ZnS:Mn a-c thin film electroluminescence devices depends on the Mn doping concentration and on the ZnS:Mn film thickness. In this study we have varied the ZnS thickness fraction doped with Mn and its location. The results of this study show that the memory loop widens incrementally with the ZnS thickness fraction doped with Mn. We infer that the Mn doping is affecting the high-field bulk conductivity of the ZnS. © 1980, The Electrochemical Society, Inc. All rights reserved.