R. Ghez, J.S. Lew
Journal of Crystal Growth
Paper
The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
Abstract
Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.
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