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Publication
VLSI Design
Paper
Temperature dependence of the electron and hole scattering mechanisms in silicon analyzed through a full-band, spherical-harmonics solution of the BTE
Abstract
By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) [1], and using the full-band structure for both the electron and valence band of silicon [2], the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.