The ballistic FET: Design, capacitance and speed limit
Paul M. Solomon, Steven E. Laux
IEDM 2001
Techniques for ascertaining the small-signal behavior of semiconductor devices in the context of numerical device simulation are discussed. Three standard approaches to this problem will be compared: (i) transient excitation followed by Fourier decomposition, (ii) incremental charge partitioning, and (iii) sinusoidal steady-state anal-ysis. Sinusoidal steady-state analysis is shown to be the superior approach by providing accurate, rigorously correct results with reasonable computational cost and programming commitment. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.
Paul M. Solomon, Steven E. Laux
IEDM 2001
Jeffrey Y.-F. Tang, Steven E. Laux
IEEE TCADIS
Steven E. Laux, Bertrand M. Grossman
IEEE T-ED
Arvind Kumar, Jakub Kedzierski, et al.
IEEE Transactions on Electron Devices