Publication
Applied Physics Letters
Paper

Technique for selective etching of Si with respect to Ge

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Abstract

A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF 4/H2 plasma, the observed polymer point for Ge is 1-3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.

Date

01 Dec 1988

Publication

Applied Physics Letters

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