L.J. Schowalter, J.R. Jimenez, et al.
Journal of Crystal Growth
A technique to selectively etch silicon with respect to germanium is described. The method relies on an observed small difference in the effects of polymeric etch-inhibiting layers on the two materials. In a CF 4/H2 plasma, the observed polymer point for Ge is 1-3% lower than for Si. This produces a narrow process window in which Si is etched while etching of Ge is suppressed. This technique has applications to etching of pure Si layers over Ge as well as Si-Ge alloys for device applications.
L.J. Schowalter, J.R. Jimenez, et al.
Journal of Crystal Growth
M. Wittmer, P. Fahey, et al.
Physical Review B
Y. Komem, M. Arienzo, et al.
Applied Physics Letters
T.S. Kuan, Subramanian S. Iyer
SPIE Advances in Semiconductors and Superconductors 1990