P.H. Fuoss, D.W. Kisker, et al.
Materials Science and Engineering B
We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2±0.2 eV is measured for Ga adatoms. Porous columnar features in the GaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation. © 1996 American Institute of Physics.
P.H. Fuoss, D.W. Kisker, et al.
Materials Science and Engineering B
S. Guha, V.K. Paruchuri, et al.
Applied Physics Letters
D.J. Kim, D.Y. Ryu, et al.
Journal of Applied Physics
S. Guha, F. Agahi, et al.
Applied Physics Letters