Surface core-level binding-energy shifts for GaAs(110) and GaSb(110)

Abstract

Surface 3d and 4d core-level binding-energy shifts have been resolved in photoemission from GaAs(110) and GaSb(110), which yield new information on semiconductor surface reconstruction. The shifts (∼0.3 eV) are toward higher (lower) binding energies for the surface cations (anions), in agreement with a simple model involving the known surface relaxation of GaAs(110) with a geometry-dependent initial-state charge transfer. Surface core-excitation binding energies, core-level widths, escape depths, etc., are reevaluated. © 1980 The American Physical Society.