Surface Science

Paper

01 May 1978

Superlattice umklapp processes in resonant Raman scattering

View publication

Abstract

Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.

Related

Paper

Will OLED displays challenge liquid crystal displays in notebook computer applications?

Ronald Troutman

Synthetic Metals

Paper

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

Revanth Kodoru, Atanu Saha, et al.

arXiv

Conference paper

Effects of KrF laser radiation on fused-silica glass: a comparison of samples exposed in air vs vacuum

I.K. Pour, D.J. Krajnovich, et al.

SPIE Optical Materials for High Average Power Lasers 1992

Conference paper

Coupling analysis of through-silicon via (TSV) arrays in silicon interposers for 3D systems

Biancun Xie, Madhavan Swaminathan, et al.

EMC 2011

View all publications