A. Grill, R.B. Laibowitz, et al.
Integrated Ferroelectrics
We present the results of differential resistance (dV/dI) measurement on high-transmittance Nb-Ag (or Al) microjunctions. At low bias, dV/dI has the conventional Blonder-Tinkham-Klapwijk double-dip structure plus a sharp single dip at zero bias. This zero-bias anomaly is completely suppressed by a modification in interface. It is insensitive to magnetic field. We relate it to the electron phase-coherence effect in the proximity of superconducting gap potential Δ. Above Δ/e, dV/dI exhibits an anomalous peak, whose position is found to be proportional to Δ(T,H). © 1993 The American Physical Society.
A. Grill, R.B. Laibowitz, et al.
Integrated Ferroelectrics
S. Ingvarsson, L. Ritchie, et al.
Physical Review B - CMMP
J.D. Baniecki, R.B. Laibowitz, et al.
Journal of the European Ceramic Society
C.P. Umbach, S. Washburn, et al.
International Conference on Low Temperature Physics (LT) 1983