V.K. Paruchuri, V. Narayanan, et al.
VLSI-TSA 2007
A two-dimensional device simulator is used to examine the various low-temperature profile design strategies for silicon bipolar transistors. It is found that a relaxed scaling approach offers the best overall results for high speed circuit operation at liquid nitrogen (LN2) temperatures. To support these calculations, experimental results which demonstrate that sub-100-pS emitter-coupled-logic circuit (ECL) operation at LN2 temperature is achievable are reported. Design tradeoffs are discussed on the basis of the experimental results.
V.K. Paruchuri, V. Narayanan, et al.
VLSI-TSA 2007
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
X. Liu, A. Petrou, et al.
Journal of Applied Physics
J.H. Comfort, G.L. Patton, et al.
IEDM 1990