PaperObservation of large low-field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskitesJ.Z. Sun, W.J. Gallagher, et al.Applied Physics Letters
Conference paperA High-Speed 128Kbit MRAM Core for Future Universal Memory ApplicationsA. Bette, J.K. DeBrosse, et al.VLSI Circuits 2003
Conference paperA 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cellR. Scheuerlein, W.J. Gallagher, et al.ISSCC 2000
PaperIdentifying the source of 1/f noise in SQUIDs made from high-temperature superconductorsR.H. Koch, W. Eidelloth, et al.Applied Physics Letters