Structural Composition of Polymers Relative to Their Plasma Etch Characteristics

Abstract

The etch rates of a variety of polymer films have been determined in CF4/O2 and CF4 discharges under high pressure (0.55-1.1 Torr) plasma etching conditions. In general, polymers with aromatic structure were found to etch at 0.25-0.5 the rate of nonaromatic polymers. This result and other facets of the etch data are discussed relative to the development of future positive-working E-beam/RIE resists. © 1982, The Electrochemical Society, Inc. All rights reserved.