True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
A systematic investigation of Bi on n-type GaP(110) with scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and ballistic-electron-emission microscopy (BEEM) is presented. The first 3 of Bi grows in a quasiordered monolayer, forming alternating chain and vacancy segments along the Ga-P zigzag chains with a periodicity of about 23, which is consistent with the observed 6×1 low-energy electron diffraction (LEED) pattern. Additional Bi atoms aggregate to form 10 - high clusters, which suggests a Stranski-Krastanov growth mode. The STS results show that the Bi monolayer is semiconductorlike with a band gap of about 0.55 eV; in contrast, the clusters exhibit metallic character. A 50- Bi film exhibited monocrystalline and atomically flat regions 1000 in extent, which are delineated from similar adjacent regions by height differences equal to a biatomic step. LEED shows an ordered, two-domain hexagonal surface structure that consists of a close-packed-hexagonal arrangement of Bi atoms, as observed by STM. BEEM reveals a uniform Schottky-barrier height of 1.110.02 eV at all measured positions across the sample surface. © 1991 The American Physical Society.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery