Publication
Thin Solid Films
Paper

Stresses from solid state reactions: a simple model, silicides

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Abstract

A simple model for the evolution of stresses during the formation of a reacted solid layer is proposed. It is based on the distinction between the growth itself which is controlled by the diffusion of the fast-moving atoms, and the relaxation of the stresses resulting from the growth. This latter creep process requiring the deformation of the newly formed compound necessitates the motion of both types of atom and will be controlled by the diffusion of the slow-moving atoms. No attempt is made here to fit the model actually to experimental data; however, it is shown that the calculated stress evolution duplicates rather faithfully the features of experimental observations. © 1992.

Date

29 May 1992

Publication

Thin Solid Films

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