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Paper
Stress induced pattern formation preceding crystallization of Te 3Se4(I) thin films
Abstract
Amorphous Te3Se4 and Te3Se4I thin films, prepared by rf sputtering, were crystallized by thermal treatment. The relaxation of residual stresses upon heating the films produced a macroscopic strain pattern in the amorphous phase prior to crystallization. This pattern determined the growth of a preferred crystallographic orientation which led to the evolution of a macroscopic branching crystalline morphology. Interference of transformation stresses between neighboring surface spherulites (sometimes called cylindrites) resulted in the development of shared morphological domains.