Stress dependence of photoluminescence in GaAs

Abstract

Photoluminescence in GaAs at k=0 under uniaxial stress up to 14 000 kg/cm2 is studied at 2A°K. The stress dependence of the coupling between J=32, mj=±12 and J=12, mj=±12 valence bands is observed. The deformation-potential constants for the valence band and for the acceptor ground state are determined, and the values for the valence band are a=-8.9 eV, b=-1.96 eV, and d=-5.4 eV. © 1967 The American Physical Society.