Publication
ESSDERC 1991
Conference paper

Strain relaxation in GeSi layers with uniform and graded composition

Abstract

We have calculated inter-dislocation spacing and stain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values.

Date

16 Sep 1991

Publication

ESSDERC 1991

Authors

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