Gerald Burns, F.H. Dacol, et al.
Physica C: Superconductivity and its applications
The structure of a strain relief region between a Si substrate and a low dislocation density Ge film has been measured by Raman spectroscopy. The composition of the structure has been determined with ≅1000 Å resolution in the growth direction, and the upper portions shown to be largely relaxed. The presence of microscopic inhomogeneities in these alloys is suggested.
Gerald Burns, F.H. Dacol, et al.
Physica C: Superconductivity and its applications
J.C. Tsang, M. Freitag, et al.
Nature Nanotechnology
P.M. Mooney
International Journal of High Speed Electronics and Systems
G. Burns, F.H. Dacol, et al.
Solid State Communications