Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A hydrazine-based process for solution-depositing phase-change materials (PCMs) is demonstrated, using KSb5S8 (KSS) as an example. The process involves dissolving the elemental metals and chalcogen in hydrazine at room temperature and spin-coating the solution onto a substrate, followed by a short low-temperature (T ≤ 250°C) anneal. The spin-coated KSS films, which range in thickness from 10 to 90 nm, are examined using variable temperature X-ray diffraction, medium energy ion scattering (MEIS), Rutherford backscattering spectroscopy (RBS), and scanning electron microscopy (SEM). The spin-coated KSS films exhibit a reversible amorphous-crystalline transition with a relatively high crystallization temperature (∼280°C). Selected other chalcogenide-based PCMs are also expected to be suitable for thin-film deposition using this approach. © 2006 American Chemical Society.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Robert W. Keyes
Physical Review B
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures