Simulation of phonon-limited mobility for nano-scale Si-based n-type non-planar device under general orientation and stress condition

Abstract

In this manuscript we study the mobility of nano-scale Si-based n-type non-planar devices (e.g. FinFET, Tri-Gate and nanowire). Such devices feature a 1D transport property while the carriers are confined in a 2D plane. As a result, their longitudinal mobility depends strongly on the 1D characteristics of density of states. With added external stress the behaviors of such properties differ further from those of conventional planar devices. We established a physical model to self-consistently solve the subbands and calculate the mobility under a general stress condition, and demonstrated the methodology by calculating the mobility of a simple (100) non-planar device under the choices of two orientations and one longitudinal stress condition at various gate biases. © Springer Science+Business Media LLC 2007.