Publication
Solid State Communications
Paper

Silicide Schottky barriers: An elemental description

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Abstract

A model for reactive Schottky barrier formation is proposed and applied to silicide contacts on silicon. Approximate workfunctions calculated assuming a silicon excess near the silicide/silicon interface reconcile measured barrier heights with a simple Schottky description of their energetics. © 1980.

Date

01 Jan 1980

Publication

Solid State Communications

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