Hasan M. Nayfeh, Nivo Rovedo, et al.
IEEE Transactions on Electron Devices
Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.
Hasan M. Nayfeh, Nivo Rovedo, et al.
IEEE Transactions on Electron Devices
Douglas M. Gill, Chi Xiong, et al.
CLEO 2015
James S. Dunn, David C. Ahlgren, et al.
IBM J. Res. Dev
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IRPS 2003