SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f _max = 310 GHz and BV_CEo = 2 v

Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.