Si<inf>3</inf>N<inf>4</inf>-on-SOI polarization rotator-splitter based on TM0-TE1 mode conversion

Abstract

A polarization rotator-splitter is demonstrated using a Si<inf>3</inf>N<inf>4</inf> waveguide atop a silicon waveguide. The device exhibits polarization crosstalk < -19 dB, loss < 1.5 dB, and PDL < 1.0 dB over an 80 nm bandwidth. © OSA 2014.