Si(100)2-1+Sb surfaces studied with photoemission and optical spectroscopy

Abstract

Applying in situ combination of angle-resolved photoelectron spectroscopy and /<-resolved inverse photoemission to Si(100):Sb-l XI and Si(100):Sb-2XI surfaces, we have determined the surface band gaps between the Sb derived filled and empty surface states at several points of the surface Brillouin zone. The values of the surface band gaps are compared with optical surface excitations obtained by means of surface differential reflectivity. © 1994, American Vacuum Society. All rights reserved.