Conference paper
MINORITY CARRIER TRANSPORT IN SILICON.
D.D. Tang, F. Fang, et al.
IEDM 1985
Periodic structure is observed in the tunneling current from heavily doped (n+) GaAs through AlxGa1-xAs into lightly doped (n-) GaAs at 1.6 K in magnetic fields large enough for magnetic freezeout of electrons to occur in the n - GaAs. Sixteen periods are observed for -0.6 V< VG<0 V. The phase and the voltage periodicity, 0.036 V, are independent of magnetic field. The mechanism appears to involve LO-phonon emission events by ballistic electrons. This is the first observation of sequential single-phonon emission observed in electron transport. © 1984 The American Physical Society.
D.D. Tang, F. Fang, et al.
IEDM 1985
T.W. Hickmott
Journal of Applied Physics
A.J. Speth, F. Fang
Applied Physics Letters
P. Solomon, C.M. Knoedler, et al.
IEEE T-ED