G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Self-consistent pseudopotential techniques, together with a superlattice geometry, are used to investigate the detailed electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs. For Ge-GaAs six types of interface states are found, all lying below the thermal gap. No interface states are found in AlAs-GaAs. For each interface the total charge density, self-consistent potential, projected band structure, and local density of states are presented. The interface states in Ge-GaAs are discussed in detail. We also present results for the conduction- and valence-band discontinuities at these interfaces, discuss superlattice states in AlAs-GaAs, and suggest possible relaxation at the Ge-GaAs (110) interface. © 1978 The American Physical Society.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials