Publication
Applied Physics Letters
Paper

Selectivity in copper chemical vapor deposition

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Abstract

The fundamental surface chemistry underlying selectivity in copper chemical vapor deposition (CVD) from COD-Cu-hfac and Cu(hfac)2 has been determined. Both electronic and chemistry contributions strongly influence the precursor reactivity on oxide as compared to metal surfaces. These results have important implications regarding the role of surface preparation and cleaning for initiating and maintaining selective deposition.

Date

01 Dec 1992

Publication

Applied Physics Letters

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