Selective laser annealing

Abstract

We have demonstrated that amorphous silicon films can be laser recrystallized selectively over diffused heavily doped lines in silicon substrates. The laser wavelength (1.06 μm) is chosen so that much more energy is absorbed in the heavily doped regions of the crystal than in the neighboring lightly doped regions. In this way, lines narrower than the 2.5-μm diffused width have been recrystallized with the recrystallized regions registered on the diffusions with no masking and with no alignment.