Publication
Journal of Applied Physics
Paper

Schottky barrier of nonuniform contacts to n-type and p-type silicon

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Abstract

A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

Date

01 Dec 1982

Publication

Journal of Applied Physics

Authors

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