Schottky-barrier heights of Ti and TiSi2 on n-type and p-type Si(100)

Abstract

The Schottky-barrier heights of Ti and TiSi2 on both n-type and p-type Si(100) have been measured in the temperature range 175295 K with use of a current-voltage technique. Auger-electron spectroscopy, Rutherford backscattering spectroscopy, and glancing-angle x-ray diffraction were used to monitor the silicide-formation reaction. The results showed that silicide formation has only a small effect on barrier height. The n-type and p-type barrier heights for both the metal and the reacted silicide phase were found to decrease with increasing temperature and with the same coefficient within the experimental accuracy. This coefficient was found to be approximately equal to one-half the temperature coefficient of the indirect energy gap in Si. These results are consistent with the predictions of recent models of barrier formation based on Fermi-level pinning in the center of the indirect band gap. © 1986 The American Physical Society.