Scanning magnetoresistance microscopy of La_0.67Sr _0.33MnO₃ films

Abstract

We have developed a magnetic imaging scheme using the magnetoresistive spin valve head in a dc bias mode as a sensing element. By scanning the head in contact with the sample we obtain a submicron spatial resolution map of the normal component of the magnetic field in the temperature range 4.2-300 K. The writing element of the sensor can be used to alter the local magnetic structure in a controlled way. This technique was applied to image the magnetic domain structure down to 77 K in patterned thin films of La0.67Sr 0.33MnO3, known for their colossal magnetoresistance. A reorientation of single or multiple domains in the films was accomplished by applying a local magnetic field with the writing element, while the effect on magnetotransport was monitored with the simultaneous measurement of current-voltage characteristics. © 1998 American Institute of Physics.