Publication
Applied Physics Letters
Paper

Role of carrier diffusion in lattice heating during pulsed laser annealing

View publication

Abstract

A calculation is presented which demonstrates that diffusion of the hot, dense carriers generated in pulsed laser annealing of Si can substantially reduce the rate at which energy is transferred to the semiconductor lattice near the surface. The extent of the region in which this energy transfer occurs is consequently increased.

Date

23 Jul 2008

Publication

Applied Physics Letters

Authors

Share