Marshall I. Nathan, R.T. Hodgson, et al.
Applied Physics Letters
A calculation is presented which demonstrates that diffusion of the hot, dense carriers generated in pulsed laser annealing of Si can substantially reduce the rate at which energy is transferred to the semiconductor lattice near the surface. The extent of the region in which this energy transfer occurs is consequently increased.
Marshall I. Nathan, R.T. Hodgson, et al.
Applied Physics Letters
Jerome M. Kurtzberg, Ellen J. Yoffa
Integration, the VLSI Journal
Peter S. Hauge, Ellen J. Yoffa
DAC 1986
J.A. Van Vechten, Ellen J. Yoffa, et al.
IEEE T-ED