Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The resistance as a function of tip-sample separation in the scanning tunneling microscope is calculated for distances in the transition region between tunneling and point contact. A resistance plateau appears near point contact with value A <>e2, where A is of order unity, its exact value depending on the identity of the tip atom. Good agreement is found with the recent experimental data of Gimzewski and Möller. © 1987 The American Physical Society.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983