Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Several techniques reported to be effective for the preparation of thin films of cubic phase boron nitride (c-BN) are reviewed. In order to maintain integrity and adhesion for such films at a useful thickness, it is critical to minimize their intrinsic stress. A method is detailed for stress reduction by MeV ion radiation following the deposition of c-BN films. Based on these successful processes, a new method is proposed, in which the production of stress-reducing atom displacements is achieved during ion-assisted c-BN deposition, by concurrent bombardment of the growing film with energetic ions, typically at keV energies.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials