Recombination radiation and stimulated emission in GaAs

Abstract

A review of some of the properties of GaAs injection lasers is presented. The nature of the electron-hole recombination mechanisms is examined. A comparison of the results of photo-luminescence measurements on bulk homogeneously doped samples with electroluminescence from diodes is given. The effect of temperature on laser action is discussed. The properties of continuously operated lasers are also discussed. © 1963.