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JES
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Reactive Ion Etching of GaAs in Chlorine and Resulting Surface Damage

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Abstract

Etch rate, edge profile, surface roughness, and electrical damage have been determined for reactive ion etching (RIE) of GaAs in chlorine using a system with a loadlock. Smooth surfaces and vertical edge profiles were obtained at low pressures (<15 mt) and low powers (<0.1W/cm2). The edge profile was found to be sensitive to crystallographic orientation for long etch times (>5 min). GaAs surface damage induced by RIE was characterized by I-V and C-V measurements and by photoluminescence. The different methods of measurement were compared and correlated well. Chlorine etching in a loadlock RIE system was found to cause relatively little damage compared to argon etching. © 1990, The Electrochemical Society, Inc. All rights reserved.

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JES

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