RAPID THERMAL ANNEALING OF Zn**6**4 AND Mg**2**4 IMPLANTS IN GaAs.

Abstract

Zn**6**4 and Mg**2**4 implants and their annealing were studied under conditions of rapid thermal annealing for 200 keV energy implantation using SIMS and differential Hall measurement. Zinc has been the subject of contradictory evidence. Magnesium was chosen for its preferred channelling properties, and relatively deep implants and zinc was chosen for a reassessment of the evidence. The results are presented and discussed.