RAPID ANNEALING OF SILICON.

Abstract

Silicon implanted with arsenic or boron has been annealed with a 100kW argon arc lamp turned on for a few seconds until the wafer temperature was in the 850-1250 degree C temperature range. The differences in defect behavior between such rapid annealing and furnace annealing is pointed out, and the dopant diffusion is measured. Aside from an initial movement of the boron atoms left in interstitial positions after the implant, diffusion of the boron and arsenic is consistent with standard diffusion models.