Conference paper
NONEQUILIBRIUM PHONONS AND DISORDER IN Al//xGa//1// minus //xAs.
J.A. Kash, J.C. Tsang, et al.
TMPEO 1986
The dynamics of non-equilibrium carriers injected into GaAs by either 5 or 0.5 picosecond laser pulses at 2.12 eV have been investigated by spontaneous Raman scattering. The LO phonons emitted by the "hot" carriers as they relax towards the band edges have been observed. The variation of the phonon population with time is consistent with a cascade model for electron relaxation. Non-equilibrium effects are also observed in the phonon-plasmon coupled modes for optically injected carrier concentrations >1018/cm3. © 1985.
J.A. Kash, J.C. Tsang, et al.
TMPEO 1986
J.C. Tsang, J.A. Kash
Applied Physics Letters
G.S. Agarwal, Sudhanshu S. Jha, et al.
Physical Review B
J.A. Kash
AVFOP 2005