Publication
Applied Physics Letters
Paper

Raman spectroscopy of CySi1-y alloys grown by molecular beam epitaxy

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Abstract

Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1-y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y<2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm-1.

Date

01 Dec 1992

Publication

Applied Physics Letters

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