Ellen J. Yoffa, David Adler
Physical Review B
Self-consistent solutions for quasi-one-dimensional electron states in a narrow inversion layer channel at a GaAs/AlGaAs heterointerface have been obtained for a structure with a split gate. A simple model for fixed charge at the exposed surface in the gate opening has been used in the calculation. Energy levels for lateral motion are separated by ∼1-5 meV for the example considered, with a 0.4 μm gate opening. © 1987.
Ellen J. Yoffa, David Adler
Physical Review B
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics