I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The nature of the bonding of K chemisorbed on Si(100) has been determined from analyses of ab initio electronic wavefunctions for clusters which model K./Si(100), In contrast to many recent claims, several different criteria provide totally consistent, and definitive evidence that this is an ionic bond; covalent effects are negligible. This finding is essential for understanding surface metallization of semiconductors. Furthermore, consequences of the ionic bond for the vibrational spectra of K/Si(100) are predicted and await experimental verification. © 1988.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Peter J. Price
Surface Science