SPIE Advanced Lithography 2000
Conference paper

Process window metrology


This paper is the third of a series that defines a new approach to in-line lithography control. The first paper described the use of optically measurable line-shortening targets to enhance signal-to-noise and reduce measurement time. The second described the dual-tone optical critical dimension (OCD) measurement and analysis necessary to distinguish dose and defocus. Here we describe the marriage of dual-tone OCD to SEM-CD metrology that comprises what we call `process window metrology' (PWM), the means to locate each measured site in dose and focus space relative to the allowed process window. PWM provides in-line process tracking and control essential to the successful implementation of low-k lithography.