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Applied Physics Letters
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Probing the transition layer at the SiO2-Si interface using core level photoemission

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Abstract

High resolution Si 2p photoelectron spectra obtained with synchrotron radiation are used to determine the distribution of oxidation states in the intermediary layer at the SiO2-Si interface. A ratio of 0.4:0.3:0.3 is found for the Si3+:Si2+:Si 1+ intensities independent of Si surface orientation and oxide thickness. The interface is not completely abrupt (5±1 Å width).

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Applied Physics Letters

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