F.J. Himpsel, H. Akatsu, et al.
Progress in Surface Science
High resolution Si 2p photoelectron spectra obtained with synchrotron radiation are used to determine the distribution of oxidation states in the intermediary layer at the SiO2-Si interface. A ratio of 0.4:0.3:0.3 is found for the Si3++ 1+ intensities independent of Si surface orientation and oxide thickness. The interface is not completely abrupt (5±1 Å width).
F.J. Himpsel, H. Akatsu, et al.
Progress in Surface Science
J.F. Morar, F.J. Himpsel, et al.
Physical Review B
F.J. Himpsel, U.O. Karlsson, et al.
Materials Science and Engineering B
R.J. Purtell, G. Hollinger, et al.
JVSTA