About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Probing the structure of semiconductor superlattices and heterostructures by EXAFS
Abstract
We have applied the technique of extended X-ray absorption fine structure (EXAFS) to the study of semiconductor superlattices and heterostructures. The data provide structural information on interatomic distance and local order in several different materials. The results of direct measurement of lattice distortion in the thin films suggest that EXAFS can be employed as a useful method for studying the strained-layer superlattices. © 1986.